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SEMIX205GD12E4V2 27923320 SEMIKRON DANFOSS


SEMiX205GD12E4V2.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; thermistor
Case: SEMiX® 5
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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Технічний опис SEMIX205GD12E4V2 27923320 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Topology: IGBT three-phase bridge; thermistor, Case: SEMiX® 5, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV.