SEMIX206GD12M7P 27896120 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
Gate-emitter voltage: ±20V
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Технічний опис SEMIX206GD12M7P 27896120 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Case: SEMiX® 6p, Electrical mounting: Press-Fit, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics, Topology: IGBT three-phase bridge; thermistor, Gate-emitter voltage: ±20V.