SEMIX206GD12M7P 27896120 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: SEMiX® 6p
Electrical mounting: Press-Fit
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
кількість в упаковці: 1 шт
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Технічний опис SEMIX206GD12M7P 27896120 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Case: SEMiX® 6p, Electrical mounting: Press-Fit, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Application: for UPS; Inverter; photovoltaics, Topology: IGBT three-phase bridge; thermistor, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX206GD12M7P 27896120
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX206GD12M7P 27896120 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: SEMiX® 6p Electrical mounting: Press-Fit Mechanical mounting: screw Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor |
товару немає в наявності |