SEMIX223GB12E4P 27895002 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Application: for UPS; Inverter; photovoltaics
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Electrical mounting: Press-Fit; screw
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 675A
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис SEMIX223GB12E4P 27895002 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A, Application: for UPS; Inverter; photovoltaics, Mechanical mounting: screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Electrical mounting: Press-Fit; screw, Case: SEMiX® 3p, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 225A, Pulsed collector current: 675A, Max. off-state voltage: 1.2kV, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX223GB12E4P 27895002
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX223GB12E4P 27895002 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Application: for UPS; Inverter; photovoltaics Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge; thermistor Electrical mounting: Press-Fit; screw Case: SEMiX® 3p Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 225A Pulsed collector current: 675A Max. off-state voltage: 1.2kV |
товару немає в наявності |