Продукція > SEMIKRON DANFOSS > SEMIX252GB126HDS 27890680

SEMIX252GB126HDS 27890680 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F24D03BFA2E0D6&compId=SEMIX252GB126HDS.pdf?ci_sign=d1e9d61168ef65a513d09208512c19b90e0610ef

Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SEMIX2S
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис SEMIX252GB126HDS 27890680 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 150A, Case: SEMIX2S, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mechanical mounting: screw.