SEMIX256GD12M7P 27896130 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 6p
кількість в упаковці: 1 шт
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Технічний опис SEMIX256GD12M7P 27896130 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Topology: IGBT three-phase bridge; thermistor, Type of semiconductor module: IGBT, Case: SEMiX® 6p, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX256GD12M7P 27896130
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX256GD12M7P 27896130 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Case: SEMiX® 6p |
товару немає в наявності |