SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Case: SEMIX2S
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: boost chopper; thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
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Технічний опис SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Case: SEMIX2S, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Topology: boost chopper; thermistor, Type of semiconductor module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX302GAL12E4S 27890220
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SEMIX302GAL12E4S 27890220 | Виробник : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw Case: SEMIX2S Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 900A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: boost chopper; thermistor Type of semiconductor module: IGBT |
товару немає в наявності |