SEMIX302GB12E4S 27890120 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge; thermistor
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Case: SEMIX2S
Gate-emitter voltage: ±20V
Collector current: 300A
Type of semiconductor module: IGBT
Mechanical mounting: screw
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14604.28 грн |
| 3+ | 11885.02 грн |
| 6+ | 10742.23 грн |
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Технічний опис SEMIX302GB12E4S 27890120 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Topology: IGBT half-bridge; thermistor, Pulsed collector current: 900A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Semiconductor structure: transistor/transistor, Case: SEMIX2S, Gate-emitter voltage: ±20V, Collector current: 300A, Type of semiconductor module: IGBT, Mechanical mounting: screw.