SEMIX302GB17E4S 27892110 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: SEMIX2S
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис SEMIX302GB17E4S 27892110 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Case: SEMIX2S, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor, Type of semiconductor module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX302GB17E4S 27892110
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX302GB17E4S 27892110 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: SEMIX2S Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 900A Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Type of semiconductor module: IGBT |
товару немає в наявності |