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SEMIX303GD12E4C 27890210 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: SEMIX®33c
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT three-phase bridge; thermistor
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics

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Технічний опис SEMIX303GD12E4C 27890210 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Case: SEMIX®33c, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 300A, Topology: IGBT three-phase bridge; thermistor, Pulsed collector current: 900A, Application: for UPS; Inverter; photovoltaics.