Продукція > SEMIKRON DANFOSS > SEMIX355MLI12M7 27922120

SEMIX355MLI12M7 27922120 SEMIKRON DANFOSS


pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F4143D361B80D6&compId=SEMIX355MLI12M7.pdf?ci_sign=8a3992fadfd852a7520d3ebc2a1e4125bfd8bcc3 Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 350A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 350A
Pulsed collector current: 700A
кількість в упаковці: 1 шт
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис SEMIX355MLI12M7 27922120 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 350A; screw, Mechanical mounting: screw, Electrical mounting: Press-Fit; screw, Application: for UPS; Inverter; photovoltaics, Topology: thermistor; three-level inverter; single-phase, Type of semiconductor module: IGBT, Case: SEMiX® 5, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 350A, Pulsed collector current: 700A, кількість в упаковці: 1 шт.

Інші пропозиції SEMIX355MLI12M7 27922120

Фото Назва Виробник Інформація Доступність
Ціна
SEMIX355MLI12M7 27922120 Виробник : SEMIKRON DANFOSS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6F4143D361B80D6&compId=SEMIX355MLI12M7.pdf?ci_sign=8a3992fadfd852a7520d3ebc2a1e4125bfd8bcc3 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1.2kV; Ic: 350A; screw
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Application: for UPS; Inverter; photovoltaics
Topology: thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Case: SEMiX® 5
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 350A
Pulsed collector current: 700A
товару немає в наявності
В кошику  од. на суму  грн.