SEMIX453GB07E3P 27895704 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 450A
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Pulsed collector current: 1.35kA
Case: SEMiX® 3p
кількість в упаковці: 1 шт
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Технічний опис SEMIX453GB07E3P 27895704 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Mechanical mounting: screw, Electrical mounting: Press-Fit; screw, Topology: IGBT half-bridge; thermistor, Type of semiconductor module: IGBT, Application: for UPS; Inverter; photovoltaics, Gate-emitter voltage: ±20V, Collector current: 450A, Max. off-state voltage: 650V, Semiconductor structure: transistor/transistor, Pulsed collector current: 1.35kA, Case: SEMiX® 3p, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX453GB07E3P 27895704
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SEMIX453GB07E3P 27895704 | Виробник : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Mechanical mounting: screw Electrical mounting: Press-Fit; screw Topology: IGBT half-bridge; thermistor Type of semiconductor module: IGBT Application: for UPS; Inverter; photovoltaics Gate-emitter voltage: ±20V Collector current: 450A Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Pulsed collector current: 1.35kA Case: SEMiX® 3p |
товару немає в наявності |