SEMIX453GB12VS 27890141 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Pulsed collector current: 1.35kA
Max. off-state voltage: 1.2kV
Collector current: 450A
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; thermistor
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Case: SEMiX® 3s
Semiconductor structure: transistor/transistor
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Технічний опис SEMIX453GB12VS 27890141 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Application: for UPS; Inverter; photovoltaics, Gate-emitter voltage: ±20V, Pulsed collector current: 1.35kA, Max. off-state voltage: 1.2kV, Collector current: 450A, Type of semiconductor module: IGBT, Topology: IGBT half-bridge; thermistor, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Case: SEMiX® 3s, Semiconductor structure: transistor/transistor.