SEMIX453GB17E4DP 27895414 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: SEMiX® 3p
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.35kA
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис SEMIX453GB17E4DP 27895414 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Case: SEMiX® 3p, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 1.35kA, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor, Type of semiconductor module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX453GB17E4DP 27895414
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX453GB17E4DP 27895414 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Case: SEMiX® 3p Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 1.35kA Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT half-bridge; thermistor Type of semiconductor module: IGBT |
товару немає в наявності |