SEMIX453GB17E4S 27892130 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.35kA
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Semiconductor structure: transistor/transistor
Case: SEMiX® 3s
Gate-emitter voltage: ±20V
Collector current: 450A
Topology: IGBT half-bridge; thermistor
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Технічний опис SEMIX453GB17E4S 27892130 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 1.35kA, Max. off-state voltage: 1.7kV, Electrical mounting: Press-Fit; screw, Semiconductor structure: transistor/transistor, Case: SEMiX® 3s, Gate-emitter voltage: ±20V, Collector current: 450A, Topology: IGBT half-bridge; thermistor.

