SEMIX453GM12E4P 27895064 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT x2; thermistor
Type of semiconductor module: IGBT
Case: SEMiX® 3p
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 1.35kA
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис SEMIX453GM12E4P 27895064 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Topology: IGBT x2; thermistor, Type of semiconductor module: IGBT, Case: SEMiX® 3p, Max. off-state voltage: 1.2kV, Semiconductor structure: common emitter; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 1.35kA, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX453GM12E4P 27895064
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX453GM12E4P 27895064 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Application: for UPS; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Topology: IGBT x2; thermistor Type of semiconductor module: IGBT Case: SEMiX® 3p Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 1.35kA |
товару немає в наявності |