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SEMIX453GM12E4P 27895064 SEMIKRON DANFOSS


SEMIX453GM12E4P.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2; thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: SEMiX® 3p
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.35kA
Mechanical mounting: screw
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Технічний опис SEMIX453GM12E4P 27895064 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Type of semiconductor module: IGBT, Semiconductor structure: common emitter; transistor/transistor, Topology: IGBT x2; thermistor, Max. off-state voltage: 1.2kV, Collector current: 450A, Case: SEMiX® 3p, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.35kA, Mechanical mounting: screw.