SEMIX503GD126HDC 27890740 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX®33c
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Application: for UPS; Inverter; photovoltaics
Topology: IGBT three-phase bridge; thermistor
кількість в упаковці: 1 шт
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Технічний опис SEMIX503GD126HDC 27890740 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Case: SEMIX®33c, Mechanical mounting: screw, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Application: for UPS; Inverter; photovoltaics, Topology: IGBT three-phase bridge; thermistor, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX503GD126HDC 27890740
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SEMIX503GD126HDC 27890740 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMIX®33c Mechanical mounting: screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Application: for UPS; Inverter; photovoltaics Topology: IGBT three-phase bridge; thermistor |
товару немає в наявності |