SEMIX503GD126HDC 27890740 SEMIKRON DANFOSS

Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Case: SEMIX®33c
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Application: for UPS; Inverter; photovoltaics
Pulsed collector current: 600A
Topology: IGBT three-phase bridge; thermistor
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
кількість в упаковці: 1 шт
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Технічний опис SEMIX503GD126HDC 27890740 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Case: SEMIX®33c, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 300A, Application: for UPS; Inverter; photovoltaics, Pulsed collector current: 600A, Topology: IGBT three-phase bridge; thermistor, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX503GD126HDC 27890740
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SEMIX503GD126HDC 27890740 | Виробник : SEMIKRON DANFOSS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit; screw Case: SEMIX®33c Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 300A Application: for UPS; Inverter; photovoltaics Pulsed collector current: 600A Topology: IGBT three-phase bridge; thermistor Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor |
товару немає в наявності |