SEMIX603GAL12E4P 27895020 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; thermistor, Max. off-state voltage: 1.2kV, Collector current: 600A, Case: SEMiX® 3p, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.8kA, Mechanical mounting: screw.