SEMIX603GB12E4I25P 27897010 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Pulsed collector current: 1.8kA
Collector current: 600A
Gate-emitter voltage: ±20V
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; shunt resistor; thermistor
Case: SEMiX® 3p
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Pulsed collector current: 1.8kA
Collector current: 600A
Gate-emitter voltage: ±20V
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; shunt resistor; thermistor
Case: SEMiX® 3p
кількість в упаковці: 1 шт
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Технічний опис SEMIX603GB12E4I25P 27897010 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Pulsed collector current: 1.8kA, Collector current: 600A, Gate-emitter voltage: ±20V, Type of module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Topology: IGBT half-bridge; shunt resistor; thermistor, Case: SEMiX® 3p, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX603GB12E4I25P 27897010
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SEMIX603GB12E4I25P 27897010 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; shunt resistor; Urmax: 1.2kV Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Pulsed collector current: 1.8kA Collector current: 600A Gate-emitter voltage: ±20V Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; shunt resistor; thermistor Case: SEMiX® 3p |
товар відсутній |