Продукція > SEMIKRON DANFOSS > SEMIX603GB12E4IP 27897000

SEMIX603GB12E4IP 27897000 SEMIKRON DANFOSS


SEMIX603GB12E4IP.pdf
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Electrical mounting: Press-Fit; screw
Topology: current shunt; IGBT half-bridge; thermistor
Application: for UPS; Inverter; photovoltaics
Type of semiconductor module: IGBT
Mechanical mounting: screw
Case: SEMiX® 3p
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 600A
Max. off-state voltage: 1.2kV
Pulsed collector current: 1.8kA
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис SEMIX603GB12E4IP 27897000 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV, Electrical mounting: Press-Fit; screw, Topology: current shunt; IGBT half-bridge; thermistor, Application: for UPS; Inverter; photovoltaics, Type of semiconductor module: IGBT, Mechanical mounting: screw, Case: SEMiX® 3p, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 600A, Max. off-state voltage: 1.2kV, Pulsed collector current: 1.8kA.