SEMIX603GB12E4SICP 27895300 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Electrical mounting: Press-Fit; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 1.2kA
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: SEMiX® 3p
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: IGBT half-bridge; thermistor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 33982.35 грн |
| 3+ | 28392.00 грн |
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Технічний опис SEMIX603GB12E4SICP 27895300 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Electrical mounting: Press-Fit; screw, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 1.2kA, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Case: SEMiX® 3p, Gate-emitter voltage: ±20V, Collector current: 600A, Topology: IGBT half-bridge; thermistor.