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SEMIX604GB12VS 27890151 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: SEMiX® 4s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Mechanical mounting: screw

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Технічний опис SEMIX604GB12VS 27890151 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 600A, Case: SEMiX® 4s, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.8kA, Mechanical mounting: screw.