Продукція > SEMIKRON DANFOSS > SEMIX653GAL176HDS 27890540

SEMIX653GAL176HDS 27890540 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: SEMiX® 3s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw

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Технічний опис SEMIX653GAL176HDS 27890540 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; thermistor, Max. off-state voltage: 1.7kV, Collector current: 450A, Case: SEMiX® 3s, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw.