Продукція > SEMIKRON DANFOSS > SEMIX653GB176HDS 27890450

SEMIX653GB176HDS 27890450 SEMIKRON DANFOSS

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Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: SEMiX® 3s
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Topology: IGBT half-bridge; thermistor
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; photovoltaics
Gate-emitter voltage: ±20V

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Технічний опис SEMIX653GB176HDS 27890450 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.7kV, Case: SEMiX® 3s, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Topology: IGBT half-bridge; thermistor, Collector current: 450A, Pulsed collector current: 900A, Application: for UPS; Inverter; photovoltaics, Gate-emitter voltage: ±20V.