Продукція > SEMIKRON DANFOSS > SEMIX854GB176HDS 27890510

SEMIX854GB176HDS 27890510 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DE1C18BAE7A0D6&compId=SEMIX854GB176HDS.pdf?ci_sign=29637392b97013fd8b626cdc8543bf1ec0823434

Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: SEMiX® 4s
Application: for UPS; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис SEMIX854GB176HDS 27890510 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.7kV, Collector current: 600A, Case: SEMiX® 4s, Application: for UPS; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.2kA, Mechanical mounting: screw.