SF2006PTH Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A TO247AD
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
| Кількість | Ціна |
|---|---|
| 3+ | 126.59 грн |
| 50+ | 65.14 грн |
| 100+ | 59.20 грн |
| 500+ | 50.65 грн |
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Технічний опис SF2006PTH Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A TO247AD, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 400 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-247AD (TO-3P), Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 175pF @ 4V, 1MHz.