SF28GHA0G

SF28GHA0G Taiwan Semiconductor Corporation


SF21G%20SERIES_H2105.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис SF28GHA0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 2A DO204AC, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-204AC (DO-15), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Technology: Standard, Qualification: AEC-Q101, Grade: Automotive, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AC, DO-15, Axial, Packaging: Tape & Box (TB).