Продукція > DIODES INCORPORATED > SF2JDF-13
SF2JDF-13

SF2JDF-13 Diodes Incorporated

SF2DDF-SF2JDF.pdf
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 600V 2A DFLAT
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: D-Flat
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Технічний опис SF2JDF-13 Diodes Incorporated

Description: DIODE GEN PURP 600V 2A DFLAT, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: D-Flat, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Technology: Standard, Mounting Type: Surface Mount, Package / Case: 2-SMD, Flat Leads, Packaging: Tape & Reel (TR).