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SG40T120DB

SG40T120DB SIRECTIFIER

pVersion=0046&contRep=ZT&docId=005056AB281E1FD095B36CB438BB80E1&compId=_Catalogue_2025-2027.pdf?ci_sign=0521c64f0236608145bd4af58e686dc01d33724b pVersion=0046&contRep=ZT&docId=005056AB0ED61ED980D71A1E9FB38143&compId=SG40T120DB.pdf?ci_sign=91dfbfdc840e9ca252cf9f4552516f8a2c621fc1 Виробник: SIRECTIFIER
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 560ns
Features of semiconductor devices: integrated anti-parallel diode
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Технічний опис SG40T120DB SIRECTIFIER

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 40A, Power dissipation: 300W, Case: TO247AD, Gate-emitter voltage: ±20V, Pulsed collector current: 180A, Mounting: THT, Gate charge: 170nC, Kind of package: tube, Turn-on time: 143ns, Turn-off time: 560ns, Features of semiconductor devices: integrated anti-parallel diode.