SGB20N60E3045A

SGB20N60E3045A Infineon Technologies


INFNS10028-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
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Технічний опис SGB20N60E3045A Infineon Technologies

Description: IGBT, 40A, 600V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 36ns/225ns, Switching Energy: 440µJ (on), 330µJ (off), Test Condition: 400V, 20A, 16Ohm, 15V, Gate Charge: 100 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 179 W.