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SH8M70TB1

SH8M70TB1 Rohm Semiconductor

SH8M70.pdf Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 250V 3A/2.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
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Технічний опис SH8M70TB1 Rohm Semiconductor

Description: MOSFET N/P-CH 250V 3A/2.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V, Rds On (Max) @ Id, Vgs: 1.63Ohm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP.