Технічний опис SI1428EDH-T1-GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70, Mounting: SMD, Drain current: 4A, On-state resistance: 45mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.8W, Polarisation: unipolar, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Gate charge: 4nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Case: SC70, Drain-source voltage: 30V, кількість в упаковці: 1 шт.
Інші пропозиції SI1428EDH-T1-GE3
| Фото | Назва | Виробник | Інформація |
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SI1428EDH-T1-GE3 | Виробник : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V кількість в упаковці: 1 шт |
товар відсутній |
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SI1428EDH-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70 Mounting: SMD Drain current: 4A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 4nC Kind of channel: enhanced Gate-source voltage: ±12V Case: SC70 Drain-source voltage: 30V |
товар відсутній |