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SI4490DY-E3 VISHAY

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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8
Technology: TrenchFET®
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 42nC
On-state resistance: 90mΩ
Power dissipation: 3.1W
Drain current: 3.2A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Case: SO8

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Технічний опис SI4490DY-E3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8, Technology: TrenchFET®, Polarisation: unipolar, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Gate charge: 42nC, On-state resistance: 90mΩ, Power dissipation: 3.1W, Drain current: 3.2A, Gate-source voltage: ±20V, Drain-source voltage: 200V, Case: SO8.