SI4500BDY-T1-E3 VISHAY

Description: MOSFET N/P-CH 20V 6.6A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Configuration: N and P-Channel, Common Drain, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT).