Технічний опис SI4933DY-T1-E3 VISHAY
Description: MOSFET 2P-CH 12V 7.4A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 7.4A, Rds On (Max) @ Id, Vgs: 14mOhm @ 9.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 500µA, Supplier Device Package: 8-SOIC.
Інші пропозиції SI4933DY-T1-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SI4933DYT1E3 | Виробник : VISHAY |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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SI4933DY-T1-E3 | Виробник : Vishay Siliconix |
 Description: MOSFET 2P-CH 12V 7.4A 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 14mOhm @ 9.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 500µA Supplier Device Package: 8-SOIC |
товар відсутній |
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SI4933DY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 7.4A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 14mOhm @ 9.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 500µA Supplier Device Package: 8-SOIC |
товар відсутній |