SI9936DY,518 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 5A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис SI9936DY,518 NXP USA Inc.
Description: MOSFET 2N-CH 30V 5A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).