SICB0660Y-TP Micro Commercial Co
Виробник: Micro Commercial Co
Description: SIC SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 21A
Capacitance @ Vr, F: 378pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис SICB0660Y-TP Micro Commercial Co
Description: SIC SCHOTTKY BARRIER DIODE, Current - Reverse Leakage @ Vr: 25 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 21A, Capacitance @ Vr, F: 378pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).