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SICR10650CT

SICR10650CT SMC Diode Solutions

SICR10650CT%20%20SICRB10650CT%20%20SICRD10650CT%20%20SICRF10650CT%20N1871%20Draft%201.pdf Виробник: SMC Diode Solutions
Description: DIODE SIL CARB 650V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+200.48 грн
10+ 173.33 грн
100+ 142.01 грн
Мінімальне замовлення: 2
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Технічний опис SICR10650CT SMC Diode Solutions

Description: DIODE SIL CARB 650V 5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.