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SICR20650WT

SICR20650WT SMC Diode Solutions

SICR20650WT%20N1996%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: DIODE SIL CARB 650V 10A TO247AD
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис SICR20650WT SMC Diode Solutions

Description: DIODE SIL CARB 650V 10A TO247AD, Current - Reverse Leakage @ Vr: 150 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247AD, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 650pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.