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SICR6650

SICR6650 SMC Diode Solutions

SICR6650%20SICRB6650%20SICRD6650%20SICRF6650%20N1934%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
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Технічний опис SICR6650 SMC Diode Solutions

Description: DIODE SIL CARB 650V 6A TO220AC, Packaging: Tube, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 150pF @ 5V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2.