SICRB10650CT SMC Diode Solutions


SICR10650CT%20%20SICRB10650CT%20%20SICRD10650CT%20%20SICRF10650CT%20N1871%20Draft%201.pdf
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 5A D2PAK
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 5A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 800 шт
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Технічний опис SICRB10650CT SMC Diode Solutions

Description: DIODE SIL CARBIDE 650V 5A D2PAK, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 5A, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).