SICRF101200 SMC Diode Solutions
Виробник: SMC Diode Solutions
Description: DIODE SIC 1.2KV 10A ITO220AC
Technology: SiC (Silicon Carbide) Schottky
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 640pF @ 0V, 1MHz
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 2+ | 276.52 грн |
| 50+ | 135.57 грн |
| 100+ | 122.96 грн |
| 500+ | 94.64 грн |
| 1000+ | 87.98 грн |
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Технічний опис SICRF101200 SMC Diode Solutions
Description: DIODE SIC 1.2KV 10A ITO220AC, Technology: SiC (Silicon Carbide) Schottky, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: ITO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 640pF @ 0V, 1MHz, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube.


