SICRS50650WT SMC Diode Solutions
Виробник: SMC Diode SolutionsDescription: DIODE SIL CARB 650V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4000pF @ 0V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
на замовлення 187 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1652.09 грн |
| 10+ | 1401.31 грн |
| 100+ | 1211.94 грн |
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Технічний опис SICRS50650WT SMC Diode Solutions
Description: DIODE SIL CARB 650V 50A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 4000pF @ 0V, 1MHz, Current - Average Rectified (Io): 50A, Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A, Current - Reverse Leakage @ Vr: 500 µA @ 650 V.