SIDC09D60E6YX1SA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис SIDC09D60E6YX1SA1 Infineon Technologies
Description: DIODE GP 600V 20A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 27 µA @ 600 V.