Технічний опис SIDC23D120E6X1SA1 Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 25A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A, Current - Reverse Leakage @ Vr: 27 µA @ 1200 V.
Інші пропозиції SIDC23D120E6X1SA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIDC23D120E6X1SA1 | Виробник : Infineon Technologies |
 Description: DIODE GP 1.2KV 25A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |