SIDC23D120H8X1SA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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Технічний опис SIDC23D120H8X1SA1 Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 35A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 35 A, Current - Reverse Leakage @ Vr: 27 µA @ 1200 V.