SIDC24D30SIC3 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE SIL CARB 300V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
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Технічний опис SIDC24D30SIC3 Infineon Technologies
Description: DIODE SIL CARB 300V 10A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 600pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 300 V.