SIDC56D60E6X1SA1 Infineon Technologies


SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7 Виробник: Infineon Technologies
Description: DIODE STD 600V 150A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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Технічний опис SIDC56D60E6X1SA1 Infineon Technologies

Description: DIODE STD 600V 150A SAWN ON FOIL, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 150A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A, Current - Reverse Leakage @ Vr: 27 µA @ 600 V.