Технічний опис SIDC78D170HX1SA1 Infineon Technologies
Description: DIODE GP 1.7KV 150A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 150A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A, Current - Reverse Leakage @ Vr: 27 µA @ 1700 V.
Інші пропозиції SIDC78D170HX1SA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIDC78D170HX1SA1 | Виробник : Infineon Technologies |
 Description: DIODE GP 1.7KV 150A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 1700 V |
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