SIGC04T60EX1SA2 Infineon Technologies


Infineon-SIGC04T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b6fad109e3acc
Виробник: Infineon Technologies
Description: IGBT CHIP
Current - Collector (Ic) (Max): 6 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 6A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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Технічний опис SIGC04T60EX1SA2 Infineon Technologies

Description: IGBT CHIP, Current - Collector (Ic) (Max): 6 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Die, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 6A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk, Current - Collector Pulsed (Icm): 18 A, Voltage - Collector Emitter Breakdown (Max): 600 V.