Технічний опис SIGC12T60SNCX1SA3 Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Supplier Device Package: Die, IGBT Type: NPT, Td (on/off) @ 25°C: 29ns/266ns, Test Condition: 400V, 10A, 25Ohm, 15V, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A.
Інші пропозиції SIGC12T60SNCX1SA3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SIGC12T60SNCX1SA3 | Виробник : Infineon Technologies |
 Description: IGBT 3 CHIP 600V WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 29ns/266ns Test Condition: 400V, 10A, 25Ohm, 15V Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A |
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